sot-89-3l 1. base 2. collector 3. emitter transistor (npn) features z small flat package z low collector- emitter saturation voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 80 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 80 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =80v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =2v, i c =50ma 70 240 dc current gain h fe(2) v ce =2v, i c =200ma 50 collector-emitter saturation voltage v ce(sat) i c =200ma,i b =20ma 0.4 v base-emitter voltage v be v ce =2v, i c =5ma 0.55 0.8 v transition frequency f t v ce =10v,i c =10ma 100 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 10 pf classification of h fe 1 rank o y range 70 C 140 120 C 240 marking eo ey symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current 400 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 1 www.htsemi.com semiconductor jinyu 2SC4374
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